俊尚科技代理美國 SVT Associate NorthStarTM原子沈積系統並提供完整的周邊配件，此外 SVT Associate 擁有專屬實驗室，可以提供客戶半導體、光電材料製程、氮製程或氧製程的專業諮詢。
SVA Associate 的 NorthStar ALD 系統可配 8 套前驅物模組和 1 個熱壁式反應腔體，另外可配合客戶需求配置進樣腔體，以維持反應腔體內的潔淨度並縮短作業時間。原子沈積技術具備絕佳的膜厚均勻性與階梯覆蓋性，可用於高 k 介電質研發、奈米鍍膜、表面修飾層、防腐蝕層、防潮層、元件封裝、MEMS、光子晶體等不同領域。以下是 SVT Associate NorthStarTM 原子沈積系統的相關資訊。
ALD-P-100B
ALD-P-100B 設備特色
- Up to 4" (100 mm) Wafer Capacity
- Hot-Wall Design: No, optional
- < ± 1 % over 100 mm
Al2O3, thickness > 20 nm - Heated Precursor Manifold with up to 4 Precursors Each
(Option for second Manifold for up to 8 Precursors) - Gas Inlet Injection Port for Precursor Manifold(s)
- Provision for Quartz Crystal Monitoring and RGA
ALD-P-200B
ALD-P-200B 設備特色
- Up to 8" (200 mm) Wafer Capacity
- Hot-Wall Design: Yes
- < ± 1 % over 200 mm
Al2O3, thickness > 20 nm - Heated Precursor Manifold with up to 4 Precursors Each
(Option for second Manifold for up to 8 Precursors) - Three Gas Inlet Injection Ports
(Two for Precursor Manifolds and One for Gas Inlet) - Provision for Quartz Crystal Monitoring and RGA