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俊尚科技代理 SVT Associate 的各款分子束磊晶系統所使用的蒸發源(K-Cell,又可稱 Effusion Cell),可用來蒸發各種元素或化合物材料。K-Cell 均由高純度材料製成,且K-Cell 的加熱區域是由陶瓷和高熔點金屬組成,可以確保了在超高真空環境中不會出現釋氣現象,並確保蒸發源的使用壽命。K-Cell 另外具備與加熱體緊密貼合的坩堝,可以達到傳統蒸發源難以企及的穩定性和再現性;K-Cell 的坩堝形狀也經過優化設計,可有效增加材料利用率。這類蒸發源非常適用於 分子束磊晶 和一般物理氣相沉積系統,可具備良好的控制性能。

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Dopant
  • Excellent Choice for Dopant Applications
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C
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Low-Temperature
  • “Hot-Lip” Filament to Prevent Condensation
  • Temperature Range:
     0 °C – 800 °C
  • Temperature Stability: 
    +/- 0.1 °C
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High Temperature
  • Stable Fluxes for Low Vapor Pressure Materials
  • Temperature Range:
     0 °C – 2,000 °C
  • Temperature Stability: 
    +/- 0.1 °C
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Dual Filament
  • Excellent Source for Desposition of Ga and In
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C
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Single Filament
  • Sturdy All Tantalum and PBN Hot Zone
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C
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Hot Lip
  • For III-V MBE. Excellent Source for Ga and In
  • Temperature Range:
     0 °C – 1,600 °C
  • Temperature Stability: 
    +/- 0.1 °C
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Cold Lip
  • For III-V MBE. Excellent Source for Deposition of Al
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C
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EXCEL
  • For Organic Compounds or High Vapor Pressure Materials
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C
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VIKING
  • Excellent Source for Ga and In.
  • “Zero” Flux Transient Designed for Corrosive Environments
  • Temperature Range:
     0 °C – 1,400 °C
  • Temperature Stability: 
    +/- 0.1 °C