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SEM下矽晶圓上以CYRANNUS系統沈積的鑽石薄膜(左圖)
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德國 iPLAS 的 CYRANNUS 微波電漿系統採用新一代電子迴轉共振微波電漿源(ECR Plasma Source),可獲得更高能量與電流密度,這對鑽石薄膜沈積的製程來說相當重要,因此 CYRANNUS 微波電漿系統在鑽石薄膜沈積的應用上有著極為優異的表現。除了鑽石薄膜的沈積外,CRYANNUS 微波電將系統亦可使用於改善基材附著力、選擇性蝕刻(selective etching)、氣體活化(gas activation)、污染物削減(abatement)、超奈米晶鑽石薄膜(UNCD,Ultrananocrystalline Diamond)等領域。
CYRANNUS 微波電漿鍍膜系統基本上都是按照客戶的需求來量身打造,因此在本網站上不提供一套制式的規格表或訂購單。下面所列舉的三款設備都是以標準模組化的元件所建構,若客戶有指定特殊規格,IPLAS 能完全按照客戶的需求打造設備。
但為了讓您更了解CRYANNUS微波電漿鍍膜系統,一份簡易的規格表還是有其參考價值。
請參考下列規格說明,並歡迎您與我們聯繫,好讓我們更深入了解您的需求:
Specification |
Description |
Plasma Source |
- CYRANNUS® I at 6" or 10.5"
- larger size on request
- diameter of plasma chamber 6" or 10.5"
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Microwave |
- 2.45 GHz / 6kW continuous wave
- switch mode power supply
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Tuner |
- automated EH tuning element controlled by PLC
- different working modes for easy operation
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Substrate Holder |
- heated or cooled substrate holder (optional)
- prepared for bias (optional)
- automated substrate positioning (optional)
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Vacuum |
- chamber directly connected to plasma source
- load lock door for substrate feeding
- double step rotary vane pump with N2 bypass
- pressure control
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Process Gas |
- individual gas flow controller
- gas shower inside plasma source
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Automation |
- control system built of modular devices
- PLC Simatic* S7
- field bus Profibus*
- process parameters displayed
- input or change of process parameters on screen
- different recipes can be stored in the PLC
- process documentation module (optional)
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Safety |
- multiple secured safety circuits
- interlocks by hardware and PLC
- CE conformity
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