微波電漿輔助化學沈積系統 Microwave Plasma-assisted CVD

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MWCVD 03

MWCVD 05

SEM下矽晶圓上以CYRANNUS系統沈積的鑽石薄膜(左圖)

德國 iPLAS 的 CYRANNUS 微波電漿系統採用新一代電子迴轉共振微波電漿源(ECR Plasma Source),可獲得更高能量與電流密度,這對鑽石薄膜沈積的製程來說相當重要,因此 CYRANNUS 微波電漿系統在鑽石薄膜沈積的應用上有著極為優異的表現。除了鑽石薄膜的沈積外,CRYANNUS 微波電將系統亦可使用於改善基材附著力、選擇性蝕刻(selective etching)、氣體活化(gas activation)、污染物削減(abatement)、超奈米晶鑽石薄膜(UNCD,Ultrananocrystalline Diamond)等領域。

 

CYRANNUS 微波電漿鍍膜系統基本上都是按照客戶的需求來量身打造,因此在本網站上不提供一套制式的規格表或訂購單。下面所列舉的三款設備都是以標準模組化的元件所建構,若客戶有指定特殊規格,IPLAS 能完全按照客戶的需求打造設備。

MWCVD 06 MWCVD 07 MWCVD 08

但為了讓您更了解CRYANNUS微波電漿鍍膜系統,一份簡易的規格表還是有其參考價值。

請參考下列規格說明,並歡迎您與我們聯繫,好讓我們更深入了解您的需求:

Specification Description
Plasma Source
  • CYRANNUS® I at 6" or 10.5"
  • larger size on request
  • diameter of plasma chamber 6" or 10.5"
Microwave
  • 2.45 GHz / 6kW continuous wave
  • switch mode power supply
Tuner
  • automated EH tuning element controlled by PLC
  • different working modes for easy operation
Substrate Holder
  • heated or cooled substrate holder (optional)
  • prepared for bias (optional)
  • automated substrate positioning (optional)
Vacuum
  • chamber directly connected to plasma source
  • load lock door for substrate feeding
  • double step rotary vane pump with N2 bypass
  • pressure control
Process Gas
  • individual gas flow controller
  • gas shower inside plasma source
Automation
  • control system built of modular devices
  • PLC Simatic* S7
  • field bus Profibus*
  • process parameters displayed
  • input or change of process parameters on screen
  • different recipes can be stored in the PLC
  • process documentation module (optional)
Safety
  • multiple secured safety circuits
  • interlocks by hardware and PLC
  • CE conformity